vlme31.. www.vishay.com vishay semiconductors rev. 1.3, 09-may-12 1 document number: 81324 for technical questions, contact: led@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 standard smd led plcc-2 description this device has been designed to meet the increasing demand for alingap technology. the package of the vlme31-series is the plcc-2. it consists of a lead frame which is embedded in a white thermoplast. the reflector insi de this package is filled up with clear epoxy. product group and package data ? product group: led ? package: smd plcc-2 ? product series: standard ? angle of half intensity: 60 features ? smd led with exceptional brightness ? luminous intensity categorized ? compatible with automatic placement equipment ? eia and ice standard package ? compatible with ir reflow, vapor phase and wave solder processes acc. to cecc 00802 and j-std-020 ? available in 8 mm tape ? low profile package ? non-diffused lens: excellent for coupling to light pipes and backlighting ? low power consumption ? luminous intensity ratio in one packaging unit i vmax. /i vmin. 1.6 ? preconditioning: acc. to jedec level 2a ? esd-withstand voltage: up to 2 kv according to jesd22-a114-b ? aec-q101 qualified ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? automotive: backlighting in dashboards and switches ? telecommunication: indica tor and backlighting in telephone and fax ? indicator and backlight fo r audio and video equipment ? indicator and backlight in office equipment ? flat backlight for lcds, switches, and symbols ? general use 19225 parts table part color luminous intensity (mcd) at i f (ma) wavelength (nm) forward voltage (v) technology min. typ. max. min. typ. max. min. typ. max. vlme31q2t1-gs08 yellow 90 - 355 20 581 588 594 - 2.0 2.6 allngap on gaas vlme31q2t1-gs18 yellow 90 - 355 20 581 588 594 - 2.0 2.6 allngap on gaas VLME31Q2T1-35-GS08 yellow 90 - 355 20 585 - 592 - 2.0 2.6 allngap on gaas vlme31r1s2-gs08 yellow 112 - 280 20 581 588 594 - 2.0 2.6 allngap on gaas vlme31r1s2-gs18 yellow 112 - 280 20 581 588 594 - 2.0 2.6 allngap on gaas vlme31s1t1-gs08 yellow 180 - 355 20 581 588 594 - 2.0 2.6 allngap on gaas vlme31s1t1-gs18 yellow 180 - 355 20 581 588 594 - 2.0 2.6 allngap on gaas
vlme31.. www.vishay.com vishay semiconductors rev. 1.3, 09-may-12 2 document number: 81324 for technical questions, contact: led@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) driving the led in reverse direction is suitable for a short term application note (1) in one packing unit i vmax. /i vmin. 1.6 note ? luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. the above type numbers represent the order groups which include only a few brightness groups. only one group will be shipped on each reel (t here will be no mixing of two groups on each reel). in order to ensure availability, single brightness groups will not be orderable. in a similar manner for colors where wavelength groups are measured and binned, si ngle wavelength grou ps will be shipped in any one reel. in order to ensure availability, single wavelength groups will not be orderable. note ? wavelengths are tested at a current pulse duration of 25 ms. absolute maximum ratings (t amb = 25 c, unless otherwise specified) vlme31.. parameter test condition symbol value unit reverse voltage (1) v r 5v dc forward current t amb 85 c i f 30 ma surge forward current t p 10 s i fsm 0.1 a power dissipation p v 80 mw junction temperature t j + 125 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c thermal resistance junction/ambient mounted on pc board (pad size > 16 mm 2 )r thja 400 k/w optical and electrical characteristics (t amb = 25 c, unless otherwise specified) vlme31.., yellow parameter test condition part symbol min. typ. max. unit luminous intensity (1) i f = 20 ma vlme31q2t1, vlme31q2t1-35 l v 90 - 355 mcd vlme31r1s2 l v 112 - 280 mcd vlme31s1t1 l v 180 - 355 mcd dominant wavelength i f = 20 ma vlme31q2t1, vlme31r1s2, vlme31s1t1 d 581 588 594 nm vlme31q2t1-35 d 585 - 592 nm peak wavelength i f = 20 ma p - 590 - nm angle of half intensity i f = 20 ma ? - 60- deg forward voltage i f = 20 ma v f -2.02.6v reverse voltage i r = 10 a v r 5--v junction capacitance v r = 0 v, f = 1 mhz c j -15-pf luminous intensity classification group luminous intensity i v (mcd) standard optional min. max. q 17190 2 90 112 r 1 112 140 2 140 180 s 1 180 224 2 224 280 t 1 280 355 2 355 450 crossing table vishay osram vlme31q2t1 lyt676-q2t1 vlme31r1s2 lyt676-r1s2 vlme31s1t1 lyt676-s1t1 color classification group soft orange dom. wavelength (nm) min. max. 1 581 584 2 583 586 3 585 588 4 587 590 5 589 592 6 591 594
vlme31.. www.vishay.com vishay semiconductors rev. 1.3, 09-may-12 3 document number: 81324 for technical questions, contact: led@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - forward current vs. ambient temperature fig. 2 - forward current vs. pulse length fig. 3 - relative luminous in tensity vs. angular displacement fig. 4 - relative in tensity vs. wavelength fig. 5 - forward current vs. forward voltage fig. 6 - relative luminous intensity vs. forward current 0 5 10 15 20 25 30 35 40 0 102030405060708090100 t amb - ambient temperature (c) 16615 i f - forward current (ma) 10 100 1000 0.01 0.1 1 10 100 t p - pulse length (ms) 16621 i fm - forward current (ma) 0.2 0.5 1 t p /t = 0.01 0.02 0.05 0.1 0.4 0.2 0 95 10319 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 i v rel - relative luminous intensity ? - angular displacement 0.0 0.2 0.4 0.6 0.8 1.0 1.2 550 570 590 610 630 650 95 10881 i rel - relative intensity - wavelength (nm) i f = 20 ma 1 10 100 1 1.5 2 2.5 3 v f - forward voltage (v) 95 10878 i f - forward current (ma) 0.01 0.1 1 10 1 10 100 i f - forward current (ma) 17511 i v rel - relative luminous intensity red
vlme31.. www.vishay.com vishay semiconductors rev. 1.3, 09-may-12 4 document number: 81324 for technical questions, contact: led@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - relative luminous in tensity vs. ambient temperature fig. 8 - forward voltage vs. ambient temperature fig. 9 - relative luminous inte nsity vs. forward current/duty cycle package dimensions in millimeters 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 102030405060708090100 t amb - ambient temperature (c) 95 10880 i v rel - relative luminous intensity i f = 20 ma 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 0 102030405060708090100 t amb - ambient temperature (c) 17502 i f = 20 ma yellow v f - forward voltage (v) 0.0 0.4 0.8 1.2 1.6 2.0 110 96 11589 i spec - specific luminous intensity t p /t i f (ma) 50 520 2 0.5 0.2 0.1 0.05 0.02 1 20541 mounting pad layout 1.2 2.6 (2.8) 1.6 (1.9) 4 4 area covered with solder resist 3.5 0.2 3 + 0.15 1.75 0.1 0.9 2.8 0.15 ca pin identification 2.2 ? 2.4 technical drawings according to din specifications drawing-no.: 6.541-5067.01-4 issue: 5; 04.11.08
vlme31.. www.vishay.com vishay semiconductors rev. 1.3, 09-may-12 5 document number: 81324 for technical questions, contact: led@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 method of taping/polarity and tape and reel smd led (vlm3 - series) vishays leds in smd packages are available in an antistatic 8 mm blister tape (i n accordance with din iec 40 (co 564) for automatic component insertation. the blister tape is a plastic strip with impressed component cavities, covered by a top tape. taping of vlm.3.. fig. 10 - tape dimensions in mm for plcc-2 reel package dimensions in millimeters for smd leds, tape option gs08 (= 1500 pcs) fig. 11 - reel dimensions - gs08 reel package dimensions in millimeters for smd leds, tape option gs18 (= 8000 pcs) preferred fig. 12 - reel dimensions - gs18 soldering profile fig. 13 - vishay lead (pb)-free reflow soldering profile (acc. to j-std-020c) fig. 14 - double wave soldering of opto devices (all packages) adhesive tape component cavity blister tape 94 8670 1.85 1.65 4.0 3.6 3.6 3.4 2.05 1.95 1.6 1.4 4.1 3.9 4.1 3.9 5.75 5.25 8.3 7.7 3.5 3.1 2.2 2.0 0.25 94 8668 180 178 4.5 3.5 2.5 1.5 13.00 12.75 63.5 60.5 14.4 max. 10.0 9.0 120 94 8665 identification label: vishay type group tape code production code quantity 321 329 identification 4.5 3.5 2.5 1.5 13.00 12.75 62.5 60.0 14.4 max. 10.4 8.4 120 18857 label: vishay type group tape code production code quantity 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19885 ir reflow soldering profile for lead (pb)-free soldering preconditioning acc. to jedec level 2a max. 2 cycles allowed 255 c 235 c to 260 c 2 k/s ca. 200 k/s second wave first wave 5 s full line: typical dotted line: process limits time (s) temperature (c) lead temperature 300 250 200 150 100 50 0 0 50 100 150 200 250 948626-1 ttw soldering (acc. to cecc00802) 100 c to 130 c forced cooling ca. 2 k/s ca. 5 k/s
vlme31.. www.vishay.com vishay semiconductors rev. 1.3, 09-may-12 6 document number: 81324 for technical questions, contact: led@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 bar code product label (example) a. type of component b. manufacturing plant c. sel - selection code (bin): e.g.: q2 = code for luminous intensity group 3 = code for color group d. date code year/week e. day code (e.g. 1: moday) f. batch no. g. total quantity h. company code dry packing the reel is packed in an an ti-humidity bag to protect the devices from absorbing moisture during transportation and storage. final packing the sealed reel is packed into a cardboard box. a secondary cardboard box is used for shipping purposes. recommended method of storage dry box storage is recommended as soon as the aluminum bag has been opened to prev ent moisture absorption. the following conditions should be observed, if dry boxes are not available: ? storage temperature 10 c to 30 c ? storage humidity 60 % rh max. after more than 672 h under these conditions moisture content will be too high for reflow soldering. in case of moisture absorption , the devices will recover to the former condition by drying under the following condition: 192 h at 40 c + 5 c/- 0 c and < 5 % rh (dry air/nitrogen) or 96 h at 60 c + 5 c and < 5 % rh for all device containers or 24 h at 100 c + 5 c not suitable for reel or tubes. an eia jedec standard jesd22-a112 level 2a label is included on all dry bags. example of jesd22-a112 level 2a label esd precaution proper storage and handling pro cedures should be followed to prevent esd damage to the devices especially when they are removed from the antistatic shielding bag. electro-static sensitive devices warning la bels are on the packaging. vishay semiconductors standard bar code labels the vishay semiconductors standard bar code labels are printed at final packing areas. the labels are on each packing unit and contain vishay semiconductors specific data. 106 37 vishay a h bc d e f g 20120 aluminum bag label reel 15973 l e v e l caution this bag contains moisture ? sensitive devices 1. shelf life in sealed bag 12 months at <40c and < 90% relative humidity (rh) 2. after this bag is opened devices that will be subjected to infrared reflow, vapor - phase reflow, or equivalent processing (peak package body temp. 260c) must be: a) mounted within 672 hours at factory condition of < 30c/60%rh or b) stored at <1 0% rh. 3. devices require baking before mounting if: a) humidity indicator card is >10% when read at 23c + 5c or b) 2a or 2b is not met. 4. if baking is required, devices may be baked for: 192 hours at 40c + 5c/ - 0c and <5%rh (dry air/nitrogen) or 96 hours at 605 o cand <5%rh for all device containers or 24 hours at 1005c not suitable for reels or tubes bag seal date: ______________________________ (if blank, see bar code label) note: level defined by eia jedec standard jesd22 - a113 2a 19786
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